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APTM100UM65DAG
Single switch with Series diode MOSFET Power Module
SK S D
VDSS = 1000V RDSon = 65m typ @ Tj = 25C ID = 145A @ Tc = 25C
Application * Zero Current Switching resonant mode
G
DK
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM100UM65DAG - Rev 1
Max ratings 1000 145 110 580 30 78 3250 30 50 3200
Unit V A V m W A mJ
July, 2006
APTM100UM65DAG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 500V ID = 145A R G = 0.75 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V
di/dt = 800A/s
Min
Typ 28.5 5.08 0.9 1068 136 692 18 14 140 55 4.8 2.9 8 3.9
Max
Unit nF
nC
ns
mJ mJ
Series diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Min 1000
Typ
Max 750 1000
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1000V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
240 2 2.2 1.7 280 350 3.04 14.4
2.5 V
Reverse Recovery Charge
C
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APTM100UM65DAG - Rev 1
July, 2006
Reverse Recovery Time
ns
APTM100UM65DAG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To Heatsink Mounting torque For teminals Package Weight Transistor Series diode 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Min Typ Max 0.038 0.23 Unit C/W V C N.m g
M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM100UM65DAG - Rev 1
July, 2006
APTM100UM65DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.5 0.3 0.9 0.7
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 320 I D, Drain Current (A) 280 240 200 160 120 80 40 0 0 5 10 15 20 25
5.5V 5V 6V VGS =15, 10V
Transfert Characteristics 480 ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V
400 320 240 160 80 0
TJ=25C TJ=125C
T J=-55C
30
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 72.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 120 80 40 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V V GS=20V
80
160
240
320
25
50
75
100
125
150
July, 2006 4-6 APTM100UM65DAG - Rev 1
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100UM65DAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=72.5A
1000
100s limited by R DSon
100
1ms
10
Single pulse TJ=150C TC=25C 1
10ms
1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=145A TJ =25C
VDS=200V VDS=500V V DS =800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5-6
APTM100UM65DAG - Rev 1
APTM100UM65DAG
Delay Times vs Current 160 t d(off) td(on) and td(off) (ns) 120
V DS=670V RG=0.75 T J=125C L=100H
Rise and Fall times vs Current 100 80
V DS =670V RG =0.75 T J=125C L=100H
tf
tr and tf (ns)
60 40 20 0 tr
80
40
t d(on)
0 50 94 138 182 226 270 ID, Drain Current (A) Switching Energy vs Current
50
94
138 182 226 I D, Drain Current (A)
270
Switching Energy vs Gate Resistance
16 Switching Energy (mJ) 12 10 8 6 4 2 0 50 94 138 182 226 270
ID, Drain Current (A) Operating Frequency vs Drain Current
26 Switching Energy (mJ)
VDS=670V RG=0.75 TJ=125C L=100H
14
Eon
22 18 14 10 6 2 0
V DS=670V ID=145A T J=125C L=100H
Eoff
Eoff
Eon
E off
1
2
3
4
5
6
7
8
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 Frequency (kHz)
ZCS
IDR, Reverse Drain Current (A)
300
1000
200 150 100 50 0 15 35 55 75 95 115 ID, Drain Current (A) 135
VDS=670V D=50% RG=0.75 T J=125C T C=75C
100
T J=150C T J=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2006
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM100UM65DAG - Rev 1

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